Contact Structure Formation in Carbon Nanotube Electronic Devices
and Its Effect on Electron Transport
Weiqi Luo, Kathik Ravichandran, Wolfgang Windl, and Leonardo R.C. Fonseca
Molecular devices with carbon nanotubes (CNTs) as a channel material in field effect transistors
are currently studied as a possible future replacement of the current CMOS technology. In carbon
nano-tube field effect transistors, the nanotube/metal contact forms a crucial region which exerts
considerable influence on the device characteristics. In this study, we perform molecular process
modeling by ab-initio temperature-accelerated dynamics to study the contact formation between
Ti-metal and a (3,3) nanotube and the respective change in the electron transport properties. Our
results indicate that the nanotube disintegrates on Ti to form a flat graphene-like structure causing
a significant decrease in the current through the device in comparison to the optimum structure.
It may help explaining the order-of-magnitude difference between the experimental and simulated
current-voltage and conductance-voltage curves. However, the overall picture
Keywords: carbon nanotube, molecular devices, transport
Publisher: Materials Science and Technology Conference (MS&T) 2006
Product Format: PDF
Date Published: October 15, 2006
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